Low Temperature Sacrificial Wafer Bonding for Planarization after Very Deep Etching

نویسندگان

  • V. L. Spiering
  • J. W. Berenschot
  • M. Elwenspoek
چکیده

new technique, at temperatures of 150°C or 450°C t provides planarization after a very deep etching step silicon is presented. Resist spinning and layer palerning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of (1) polymer bopding followed by dry etching and (2) anodic bonding combined with KOH etching are discussed. The polymer method was applied in a strain based membrane prelssure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation thin silicon nitride membrane by metal bridges. MESA Research Institute, University of Twente,

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تاریخ انتشار 2004